Work

Study of In0.53Ga0.47As/ InP/InAlAs/InP heterostructures by ToF-SIMS and HAXPES

Year: 2024

Type: conference-paper

Source: HAL (Le Centre pour la Communication Scientifique Directe)

Authors: Tagougue, G. Tsamo, Martinez, E., Veillerot, M., Thoréton, V., Bassani, F., Martin, M., Baron, T.

Institutions: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Laboratoire des Technologies de la Microélectronique, Laboratoire d'Électronique des Technologies de l'Information

Language: English

Topic: Ion-surface interactions and analysis

Subfield: Computational Mechanics

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4404308642

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