Year: 2024
Type: article
Abstract: Magnetic tunnel junction is an important part of magnetoresistive random access memory, which mainly relies on spin-dependent electron tunnelling for information reading. Traditional magnetic tunnel junctions, which use ferromagnetic materials as the core functional materials, have encountered challenges in terms of ultra-fast response and high-density integration. Recently, the all-antiferromagnetic tunnel junction has attracted considerable attention as a new type of magnetic tunnel junction device. Based on some kinds of antiferromagnetic materials with certain symmetries, the all-antiferromagnetic tunnel junction exhibits obvious tunnelling magnetoresistance, and has the potential to overcome a series of shortcomings of traditional ferromagnetic tunnel junctions. Further exploration of novel antiferromagnetic materials, along with the development of low-energy and reliable information storage methods, will be crucial in advancing this research field.
Authors: XiaoRong ZHOU, PeiXin QIN, ZhiQi LIU
Institution: Beihang University
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W4404312964