Work

Electron transport in quasi-ballistic FETs subjected to a magnetic field

Year: 2024

Type: article

Abstract: We report the study of quasi-ballistic electron transport in short FETs subjected to magnetic field. Spatial distributions of electron concentrations, velocities, Hall currents, and voltages in the short FET channels are determined. The basic properties of current–voltage characteristics of quasi-ballistic FETs in magnetic field are analyzed, among them the kink-like characteristics of the near-ballistic device. Peculiarities of magnetoresistance of such FETs are studied for low and high magnetic fields and different current regimes. For nonlinear current regimes, we revealed significantly larger magnetoresistance for the devices with higher ballisticity. Numerical estimates of studied effects are presented. We suggest that the found results contribute to the physics of short FETs and can be used for developing nanoscale devices for particular applications.

Source: AIP Advances

DOI: 10.1063/5.0243812

Authors: M. Yelisieiev, V. A. Kochelap

Institutions: National Academy of Sciences of Ukraine, V.E. Lashkaryov Institute of Semiconductor Physics, Institute of High Pressure Physics, Polish Academy of Sciences

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,350

Funder: Polska Akademia Nauk