Work

Machine Learning‐Guided Design of 10 nm Junctionless Gate‐All‐Around Metal Oxide Semiconductor Field Effect Transistors for Nanoscaled Digital Circuits

Year: 2024

Type: article

Source: physica status solidi (a)

DOI: 10.1002/pssa.202400670

Authors: Rabia Ouchen, Tarek Berghout, Faycal Djeffal, Hichem Ferhati

Institutions: University of Batna 2, Larbi Ben M'hidi University of Oum El Bouaghi

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4404327202

FWCI: 0.82

Cites: 17

Cited by: 8

Related to: 10