Work

Effects of ion irradiation induced phase transformations and oxygen vacancies on the leakage current characteristics of HfO2 thin films deposited on GaAs

Year: 2024

Type: article

Source: Journal of Physics D Applied Physics

DOI: 10.1088/1361-6463/ad91c2

Authors: K Vinod Kumar, N Arun, A Mangababu, A Mishra, Sunil Ojha, A P Pathak, S V S Nageswara Rao

Institutions: Central University of Tamil Nadu, University of Hyderabad, Indian Institute of Technology Delhi, Banaras Hindu University, Inter-University Accelerator Centre

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Inter-University Accelerator Centre

OpenAlex ID: W4404332089

FWCI: 0.104

Cites: 53

Cited by: 1

Related to: 10