Work

Theoretical Study of Enhancing the Performance of InP/InGaAs Avalanche Photodiodes with p‐Type‐Doped InP Interposed Layer

Year: 2024

Type: article

Source: physica status solidi (RRL) - Rapid Research Letters

DOI: 10.1002/pssr.202400262

Authors: Jingbo Lin, Guijuan Zhao, Ziwei Zhou, Xiacong Liu, Xingliang Wang, Wanting Wei, Zhiyuan Hao, Yuhang Wang, Guipeng Liu

Institution: Lanzhou University

Language: English

Topic: Advanced Semiconductor Detectors and Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Fundamental Research Funds for the Central Universities

Awards: G1162551323, G3842074497

OpenAlex ID: W4404362207

FWCI:

Cites: 24

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Related to: 10