Work

Interface energies of Ga 2 O 3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained

Year: 2024

Type: article

Abstract: Ga 2 O 3 /Al 2 O 3 interface energy calculations reveal that the α phase is preferred, explaining the phase-locking epitaxy.

Source: Journal of Materials Chemistry C

DOI: 10.1039/d4tc04307c

Authors: Ilaria Bertoni, Aldo Ugolotti, Emilio Scalise, Roberto Bergamaschini, Leo Miglio

Institution: University of Milano-Bicocca

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

Funders: European Commission, NextGenerationEU

Awards: G1175062043, G2649423451, G6864651278, G6977740132

OpenAlex ID: W4404393709

FWCI: 1.001

Cites: 29

Cited by: 13

Related to: 10