Dispersion-engineered InGaAsP/InP waveguide for high efficiency all-optical on-chip wavelength conversion
Year: 2024
Type: article
Abstract: InGaAsP/InP waveguide platform offers superiority for all-optical on-chip wavelength conversion due to strong optical nonlinearity. However, a small refractive index difference between the core and cladding makes it challenging to achieve sufficient structural dispersion for phase matching. In this work, the InGaAsP multilayer waveguide and the SiN-cladded InGaAsP waveguide are investigated for optimized wavelength conversion at telecom wavelengths. Structural dispersion is effectively engineered through the incorporation of additional slot layers and a heterogeneous passivation layer. Through comparative analysis, the wavelength conversion efficiency of -4.7 dB is achieved by the SiN-cladded waveguide, which shows an improvement of 22 dB compared to traditional nanowire waveguide.
Source: Optical Materials Express
DOI: 10.1364/ome.539949
Institution: Suzhou Institute of Nano-tech and Nano-bionics
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,843
Award: G8573892512
OpenAlex ID: W4404402917