Work

Photovoltaics Based on Direct and Indirect Gap Semiconductors

Year: 2024

Type: article

Abstract: Direct and thin, or indirect and thick absorbers can yield cells close to 30% but there are practical limits due to defects, cost, reliability. Tandems and new ideas are needed to minimize thermalization and entropy losses and to enable high absorptance in thin Si layers. Direct-gap absorbers have ~1000x higher recombination losses than Si, but being 100x thinner, the limiting 1-sun efficiencies are similar due to 100x higher G.

Source: OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)

Author: Stradins, Paul

Language: English

Topic: Silicon and Solar Cell Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: green

Funders: U.S. Department of Energy, Office of Energy Efficiency and Renewable Energy, Office of Energy Efficiency, National Renewable Energy Laboratory

OpenAlex ID: W4404407427

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Related to: 10