Work

High-Accuracy Thermal Resistance Measurement Method for GaN HEMTs Based on Harmonic Pulsewidth Subthreshold

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3493062

Authors: Ningyu Luo, Huiqing Wen, Wen Liu, Lin Jiang

Institutions: Xi’an Jiaotong-Liverpool University, University of Liverpool

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Suzhou Key Industrial Technology Innovation Project

Award: G1829363404

OpenAlex ID: W4404410977

FWCI: 0.433

Cites: 34

Cited by: 3

Related to: 10