SRAM With Oxide Semiconductor Pull-Down Transistors on the Backside Enabling Full-Node PPA Improvement
Year: 2024
Type: article
Source: IEEE Electron Device Letters
Authors: Tao Chou, Tzu-Yun Liu, Li-Kai Wang, Tsai-Yu Chung, Ching-Wang Yao, Hsin-Cheng Lin, C. W. Liu
Institution: National Taiwan University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4404411198