Year: 2024
Type: article
Abstract: This study reports the effect of inductively coupled plasma reactive ion etching using a BCl3/Ar gas mixture on the sidewall taper angle (STA), etch rate, and surface morphology of (−201) β‐Ga2O3 substrates, as well as (−201)‐oriented β‐Ga2O3 films on sapphire, for nano‐fins of ≈200 nm width. Various etch parameters are systematically investigated for the β‐Ga2O3 films on sapphire, revealing that the STA is lower at high plasma density when chemical component increases, and the ion scattering decreases; achieving a STA of 1.5° ± 0.7°, accompanied by an etch rate of 114 nm min−1 and a reduction in surface roughness compared to before etching. Additionally, a strong positive correlation between the STA and the crystal orientation in the β‐Ga2O3 substrates is observed at lower plasma density, while a weak correlation is found between the STA and the crystal orientation at high plasma density. This study provides valuable insights for the fabrication of β‐Ga2O3 devices.
Source: physica status solidi (b)
Authors: Glen Isaac Maciel García, Vishal Khandelwal, Yi Lu, Saravanan Yuvaraja, Xiaohang Li
Institution: King Abdullah University of Science and Technology
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
Awards: G2435439527, G4656820343, G5901082131
OpenAlex ID: W4404414577