Work

On Increasing of an Integration Rate of Bipolar Heterotransistors in the Framework of a Single Leg N-level Cascaded H-Bridge Multilevel Inverter

Year: 2024

Type: article

Abstract: In this paper, we introduce an approach for increasing integration rate of bipolar heterotransistors in the framework of a single-leg N-level cascaded H-bridge multilevel inverter. In the framework of the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.

Source: International Journal of Computer-Aided Technologies

DOI: 10.5121/ijcax.2024.11401

Author: E.L Pankratov

Language: English

Topic: Multilevel Inverters and Converters

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: diamond

OpenAlex ID: W4404445154

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