Work

Highly Robust p-GaN Gate HEMT With Surge-Energy Ruggedness Under Unclamped Inductive Switching and UV Pulse Laser Irradiation

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3501073

Authors: Feng Zhou, Tianyang Zhou, Can Zou, Rong Yu, Junfan Qian, Weizong Xu, Fangfang Ren, Dong Zhou, Dunjun Chen, Youdou Zheng, Rong Zhang, Hai Lu

Institutions: Collaborative Innovation Center of Advanced Microstructures, Nanjing University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: National Natural Science Foundation of China, Jiangsu Provincial Key Research and Development Program, Key Technology Research and Development Program of Shandong, National Key Research and Development Program of China

Awards: G1645619863, G1836750560, G2066796707, G5599384349, G6737454608, G6906729860, G7569238931, G808050238, G8300364466, G8896928034, G8950210697

OpenAlex ID: W4404479882

FWCI: 1.01

Cites: 27

Cited by: 7

Related to: 10