Work

Enhanced Optical and Electrical Properties of IGZO/Ag/IGZO for Solar Cell Application via Post-Rapid Thermal Annealing

Year: 2024

Type: article

Abstract: In this paper, we optimized IGZO/Ag/IGZO (IAI) multilayer films by post-rapid thermal annealing (RTA) to enhance the electrical conductivity and optical transmittance in visible wavelengths for solar cell applications. Our optimized device showed an average transmittance of 85% in the visible range, with a lowest sheet resistance of 6.03 Ω/□ when annealed at 500 °C for 60 s. Based on these results, we assessed our device with photo-generated short circuit current density (JSC) using a solar cell simulator to confirm its applicability in the solar cell. IAI multilayer RTA at 500 °C for 60 s showed a highest JSC of 40.73 mA/cm2. These results show that our proposed IAI multilayer film, which showed a high optical transparency and electrical conductivity optimized with post RTA, seems to be excellent transparent electrode for solar cell applications.

Source: Nanomaterials

DOI: 10.3390/nano14221841

Authors: Chanmin Hwang, Taegi Kim, Yuseong Jang, Doowon Lee, Hee-Dong Kim

Institutions: Sejong University, Kongju National University

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: gold

Estimated APC paid: $3,296