Work

Effect of temperature on the performance of ScAlN/GaN high-electron mobility transistor

Year: 2024

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0239643

Authors: Md Tanvir Hasan, Jiangnan Liu, Ding Wang, Shubham Mondal, Md Mehedi Hasan Tanim, Samuel Yang, Zetian Mi

Institution: University of Michigan

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: University of Michigan

OpenAlex ID: W4404485131

FWCI: 2.885

Cites: 39

Cited by: 20

Related to: 10