Coexistence of analog and digital resistive switching behaviors in TiN/SiNx resistive random access memory device
Year: 2024
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0232217
Authors: Haixia Gao, Yang Zhao, Shilong Zhu, Xuan Qiu, Rui Wang, Jingli Guo, Xiaohua Ma, Yintang Yang
Institution: Xidian University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4404485367