Year: 2024
Type: article
Abstract: An extreme bandgap Al0.64Ga0.36N quantum channel HEMT with Al0.87Ga0.13N top and back barriers, grown by MOCVD on a bulk AlN substrate, demonstrated a critical breakdown field of 11.37 MV/cm—higher than the 9.8 MV/cm expected for the channel’s Al0.64Ga0.36N material. We show that the fraction of this increase is due to the quantization of the 2D electron gas. The polarization field maintains electron quantization in the quantum channel even at low sheet densities, in contrast to conventional HEMT designs. An additional increase in the breakdown field is due to quantum-enabled real space transfer of energetic electrons into high-Al barrier layers in high electric fields. These results show the advantages of the quantum channel design for achieving record-high breakdown voltages and allowing for superior power HEMT devices.
Source: Micromachines
DOI: 10.3390/mi15111384
Authors: Michael Shur, Grigory Simin, Kamal Hussain, Abdullah Mamun, MVS Chandrashekar, Asif Khan
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,955
OpenAlex ID: W4404485948