Work

Temperature-Dependent Ferroelectric Behaviors of AlScN-Based Ferroelectric Capacitors with a Thin HfO2 Interlayer for Improved Endurance and Leakage Current

Year: 2024

Type: article

Abstract: The ferroelectric switching behavior of a metal–ferroelectric AlScN–HfO2 interlayer–metal (MFIM) capacitor was investigated at variable temperatures and compared with an MFM capacitor. Although the MFIM capacitor demonstrated an inferior remnant polarization (2Pr value of 74 µC/cm2), it exhibited a reduced leakage current (×1/100) and higher breakdown field. The MFIM showed a stable change in 2Pr from room temperature to 200 °C and an enhanced endurance of ~104 cycles at 200 °C; moreover, the leakage current was less degraded after the cycling tests. Thus, the ferroelectric AlScN with a thin HfO2 interlayer can enhance the reliability of ferroelectric switching.

Source: Electronics

DOI: 10.3390/electronics13224515

Authors: Hyeong Jun Joo, Si Sung Yoon, Seung Yoon Oh, Yoojin Lim, Gyu Hyung Lee, Geonwook Yoo

Institution: Soongsil University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,728

Funders: National Research Foundation, National Research Foundation of Korea, Ministry of Science and ICT, South Korea