Work

Electric-field-induced polarization anisotropy of interband photoluminescence in GaAs

Year: 2024

Type: article

Abstract: Near-infrared photoluminescence spectra of the n-doped gallium arsenide epilayer under heating lateral electric field conditions are studied. The field dependences of hot electron and hole temperatures are determined from photoluminescence spectra and from solving the power balance equation using current–voltage characteristic. Polarization anisotropy of the photoluminescence radiation arising due to the anisotropy of hot electron distribution function and angular dependence of the interband optical matrix element in the momentum space is observed and investigated. The obtained experimental data are in satisfactory agreement with the theoretical model.

Source: Journal of Applied Physics

DOI: 10.1063/5.0233573

Authors: V. A. Shalygin, I. S. Makhov, R. B. Adamov, M. Ya. Vinnichenko, V. P. Khvostikov, D. A. Firsov

Institutions: Peter the Great St. Petersburg Polytechnic University, National Research University Higher School of Economics, Ioffe Institute

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,500

Funder: Russian Science Foundation