Work

Atomic layer deposition of ultrathin nitride films for enhanced carrier lifetimes and photoluminescence in CdTe/MgCdTe double heterostructures

Year: 2024

Type: article

Abstract: This work evaluates the passivation effectiveness of ultrathin nitride layers (SiNx, AlN, and TiN) deposited via atomic layer deposition on CdTe/MgCdTe double heterostructures for solar cell applications. Time-resolved photoluminescence and photoluminescence measurements revealed enhanced carrier lifetimes and reduced surface recombination, indicating improved passivation effectiveness. These results underscore the potential of SiNx as a promising passivation material to improve the efficiency of CdTe solar cells.

Source: Journal of Applied Physics

DOI: 10.1063/5.0226425

Authors: Haris Naeem Abbasi, Xin Qi, Zheng Ju, Zhenqiang Ma, Yong-Hang Zhang

Institutions: University of Wisconsin–Madison, Arizona State University

Language: English

Topic: Chalcogenide Semiconductor Thin Films

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: hybrid

Estimated APC paid: $3,500