Work

Low-frequency noise of MoTe2 transistor: effects on ambipolar carrier transport and CYTOP doping

Year: 2024

Type: article

Abstract: Low-frequency noise (LFN) characteristics of semiconductor devices pose a significant importance for understanding their working principle, particularly concerning material imperfections. Accordingly, substantial research endeavors have focused on characterizing the LFN of devices. However, the LFN characteristics of the ambipolar transistors have been rarely demonstrated. Herein, we investigate the effects of ambipolar carrier transport and CYTOP-induced p-type doping on low-frequency noise characteristics of MoTe2 transistors. The source of the 1/f noise differs between the n-type (electron transport) and p-type (hole transport) modes. Notably, the influence of contact resistance is more pronounced in the n-type mode. CYTOP doping suppresses the n-type mode by introducing hole doping effects. Furthermore, CYTOP doping mitigates the impact of contact resistance on excess noise.

Source: Discover Nano

DOI: 10.1186/s11671-024-04068-8

Authors: Wonjun Shin, Dong Hyun Lee, Raksan Ko, Ryun-Han Koo, Hocheon Yoo, Sung-Tae Lee

Institutions: Seoul National University, Sungkyunkwan University, Gachon University, Hongik University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,990

Funders: Hongik University, Ministry of Trade, Industry and Energy, National Research Foundation of Korea