Work

Analysis of the Photoluminescence Bandgap Temperature Dependence to Investigate the Doping of Micrometric Size GaAs Crystals Grown on Silicon for Tandem Solar Cells Applications

Year: 2024

Type: article

Abstract: This work presents and discusses the extraction of the active dopants density of GaAs layers from the modeling of the bandgap temperature dependence derived from photoluminescence measurements.

Source: physica status solidi (a)

DOI: 10.1002/pssa.202400609

Authors: Denis Mencaraglia, Alexandre Jaffré, Guillaume Chau, Jose Alvarez, James Patrick Connolly, Laurie Dentz, Geraldine Hallais, Charles Renard

Institutions: Centre National de la Recherche Scientifique, Université Paris-Saclay, Laboratoire de Génie Électrique et Électronique de Paris, Sorbonne Université, CentraleSupélec, Centre de Nanosciences et de Nanotechnologies

Language: English

Topic: solar cell performance optimization

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,600

Funder: Agence Nationale de la Recherche

Award: G989329748

OpenAlex ID: W4404531503

FWCI: 0.104

Cites: 12

Cited by: 1

Related to: 10