Work

Growth-related I3 defects in hexagonal Ge-2H and their thermal evolution

Year: 2024

Type: conference-paper

Abstract: International audience

Source: HAL (Le Centre pour la Communication Scientifique Directe)

Authors: Vincent, Laetitia, Verheijen, Marcel, Fadaly, Elham, Peters, Wouter, Travers, Laurent, Renard, Charles, Bakkers, Erik

Institution: Centre de Nanosciences et de Nanotechnologies

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W4404531761

FWCI:

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