Work

Hafnia-Based Ferroelectric Transistor with Poly-Si Gates for Gate-First Three-Dimensional NAND Structures

Year: 2024

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.4c17210

Authors: Ik-Jyae Kim, Jiwoung Choi, Jang-Sik Lee

Institution: Pohang University of Science and Technology

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Research Foundation of Korea, Samsung, Korea Evaluation Institute of Industrial Technology

Awards: G1612713835, G1974887968

OpenAlex ID: W4404535974

FWCI: 0.312

Cites: 43

Cited by: 3

Related to: 10