Ferroelectrically gated sub-6 nm monolayer MoS 2 transistors for high-performance and low-power applications
Year: 2024
Type: article
Source: Journal of Materials Chemistry C
DOI: 10.1039/d4tc03794d
Authors: Jin Yuan, Jian-Qing Dai, Miao-Wei Zhao, Yun-Ya Zhong, Da-Wei Deng
Institution: Kunming University of Science and Technology
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4404536381