Work

Suboxides and subselenides: intermediate reaction products to form Ga 2 O 3 , Ga 2 Se 3 , In 2 O 3 , In 2 Se 3 , SnO 2 , and SnSe 2 during molecular-beam epitaxy

Year: 2024

Type: article

Abstract: as the specific example for III-Se materials. Our kinetic and thermodynamic conclusions suggest subcompound-limited growth may be an inherent property for the growth of III-VI and IV-VI thin films by MBE and related epitaxial growth techniques.

Source: Physical Chemistry Chemical Physics

DOI: 10.1039/d4cp01702a

Authors: Patrick Vogt, Shun-Li Shang, Zi-Kui Liu

Institutions: University of Bremen, Pennsylvania State University

Language: English

Topic: Crystal Structures and Properties

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W4404542498

FWCI: 0.154

Cites: 50

Cited by: 2

Related to: 10