Work

HfO2–ZrO2 Superlattice Ferroelectric Films as Gates for 2D MoS2-Based Negative-Capacitance Transistors with Enhanced Subthreshold and Endurance Characteristics

Year: 2024

Type: article

Source: ACS Applied Nano Materials

DOI: 10.1021/acsanm.4c04974

Authors: Jiyue Zou, Xiao Zou, Jingping Xu, Hongjiu Wang, Lu Liu

Institutions: Huazhong University of Science and Technology, Jianghan University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: National Natural Science Foundation of China, Jianghan University

Awards: G277946018, G3964020448

OpenAlex ID: W4404563091

FWCI: 0.312

Cites: 43

Cited by: 3

Related to: 10