Work

Power Board Design for Parallel SiC MOSFET Characterization

Year: 2024

Type: conference-paper

DOI: 10.1109/ecceeurope62508.2024.10752063

Authors: Maria Giorgia Spitaleri, Giuseppe Scarcella, Giacomo Scelba, Marco Latella, Agostino Cocuzza, Enrico Alfredo Bottaro, Giovanni Vinci

Institutions: University of Catania, STMicroelectronics (Italy)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4404563432

FWCI: 1.612

Cites:

Cited by: 2

Related to: 10