Year: 2024
Type: conference-paper
Abstract: This paper presents a new gate-driving profile to mitigate the switching issues caused by high-speed operation of GaN transistors in on-off transitions. The concept consists of modifying the primary PWM signal applied to the GaN transistors to an appropriate voltage profile, which changes the gate-source voltage behaviour in the critical stage of the GaN transitions. The gate-driving concept is evaluated on LTspice, and the results show the reduction of ringing and overshoots when applying the proposal while maintaining tolerable power losses.
Institution: Universitat Politècnica de Catalunya
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4404563976