Analysing the Influence of a High Number of Short Circuit Events on the Device Parameters of 1200V SiC-MOSFETs
Year: 2024
Type: conference-paper
Authors: Martin Rasch, Sönke Brandt, Tim Wanagat, Klaus F. Hoffmann
Institution: Helmut Schmidt University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4404564162