Work

Hard-and soft-switching behavior of bipolar 1.2 kV gallium arsenide (GaAs) diodes in comparison to silicon and silicon carbide devices

Year: 2024

Type: conference-paper

DOI: 10.1109/ecceeurope62508.2024.10751930

Authors: Markus Zocher, Veit Starost, Norbert Graß, Jens Kowalsky, Volker Dudek

Institution: Georg Simon Ohm University of Applied Sciences Nuremberg

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4404564506

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