Work

New 400 V SiC MOSFET and its use in Multi-Level Applications

Year: 2024

Type: conference-paper

DOI: 10.1109/ecceeurope62508.2024.10751803

Authors: Ralf Siemieniec, Martin Wattenberg, Matthias Kasper, Jyotshna Bhandari, Wei-Ju Chen, Heejae Shim, Alberto Pignatelli, Sriram Jagannath

Institution: Infineon Technologies (Austria)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Industry, innovation and infrastructure, Affordable and clean energy

Open Access status: closed

OpenAlex ID: W4404564845

FWCI:

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