Temperature-Dependent Degradation of SiC Schottky Diode Inhibition Effect on SiC MOSFET Body Diode Reverse Recovery Current
Year: 2024
Type: conference-paper
Institution: Karlsruhe Institute of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: China Scholarship Council
OpenAlex ID: W4404564932