Work

Effect of Device Parameters of SiC MOSFETs on Turn-On Overvoltage across a Freewheeling Side in a Half Bridge Configuration

Year: 2024

Type: conference-paper

DOI: 10.1109/ecceeurope62508.2024.10751898

Authors: Tatsuya Miyazaki, Yuta Okawauchi, Ryosuke Ishido, Ken Nakahara

Institution: ROHM

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4404564939

FWCI: 0.78

Cites: 10

Cited by: 1

Related to: 10