Work

Anisotropy of Minority Charge Carrier Concentration in the MOSFET Undergate Region

Year: 2024

Type: conference-paper

Source: International Conference on Electrical Engineering and Photonics (EExPolytech)

DOI: 10.1109/eexpolytech62224.2024.10755603

Author: Dmitry I. Dolzhenko

Institution: Peter the Great St. Petersburg Polytechnic University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4404564997

FWCI:

Cites: 7

Cited by:

Related to: 10