Work

Investigating Short-circuit Faults for Paralleled 3.3 kV, 450 A Si-IGBT Power Modules

Year: 2024

Type: conference-paper

DOI: 10.1109/ecceeurope62508.2024.10751899

Authors: Muhammad Nawaz, Tim Augustin, Bochen Liu

Institution: Hitachi (Sweden)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4404565271

FWCI:

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