Work

Electrochemical behavior of Ni seed layers on polysilicon wafer for solar cells

Year: 2024

Type: article

Abstract: The stripping behaviors of Ni seeds on polysilicon wafers, which were formed by galvanic displacement in a solution containing fluorine ions, were characterized by cyclic voltammetry and the surface morphologies were observed by scanning electron microscopy. It is discovered that the anodic stripping behaviors of the Ni seed layers are impacted by the duration of deposition. Two types of Ni seed layers can be distinguished. One is formed with the deposition duration less than 10 s, which corresponds to the stripping behavior of the Ni-Si structure with monolayer deposition. The other is formed with a duration greater than 10 s, which is attributed to the stripping behavior of the Ni-Ni-Si structure with bulk deposition.

Source: International Journal of Electrochemical Science

DOI: 10.1016/j.ijoes.2024.100886

Authors: Yeqiang Mo, Gangzhou Sui, Sanming Chen

Institutions: Lingnan Normal University, Guangdong Provincial Academy of Building Research Group

Language: English

Topic: Electrodeposition and Electroless Coatings

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: gold

Estimated APC paid: $1,100