Work

Achieving Equivalent Oxide Thickness Scaling of a ZrO2 Dielectric Thin Film via Gd Doping without Sacrificing Tetragonal Crystallinity

Year: 2024

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.4c01659

Authors: Seungwoo Lee, Jihun Nam, Yoona Choi, Jonghwan Jeong, Min Kyeong Nam, Hansol Oh, Hanbyul Kim, Yongjoo Park, Youngjin Kim, Woojin Jeon

Institutions: Kyung Hee University, SK Group (South Korea), Kyonggi University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Korea Basic Science Institute, National Research Foundation of Korea, Gyeonggi-do Regional Research Center, Korea Evaluation Institute of Industrial Technology

Awards: G3375451722, G4386726385, G4984478303, G8971431905

OpenAlex ID: W4404571775

FWCI: 0.822

Cites: 43

Cited by: 8

Related to: 10