Work

3D-simulation design of a high current capacity GaN tri-gate power device with integrated parasitic bipolar junction

Year: 2024

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/ad95b5

Authors: Chuan Song, Wen Yang, Huaxing Jiang, Bin Li

Institution: South China University of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Basic and Applied Basic Research Foundation of Guangdong Province

Award: G748797905

OpenAlex ID: W4404581824

FWCI: 0.149

Cites: 26

Cited by: 1

Related to: 10