Work

Enhanced Transparency and Resistive Switching Characteristics in AZO/HfO2/Ti RRAM Device via Post Annealing Process

Year: 2024

Type: article

Abstract: As interest in transparent electronics increases, ensuring the reliability of transparent RRAM (T-RRAM) devices, which can be used to construct transparent electronics, has become increasingly important. However, defects and traps within these T-RRAM devices can degrade their reliability. In this study, we investigated the improvement of transparency and reliability of T-RRAM devices with an AZO/HfO2/Ti structure through rapid thermal annealing (RTA) at 450 °C for 60 s in a nitrogen atmosphere. The device without RTA exhibited a low transmittance of 30%, whereas the device with RTA showed a significantly higher transmittance of over 75%. Furthermore, the device operated at lower current levels after RTA, which resulted in a reduction in its operating voltages, and the forming, setting, and reset voltages changed from 3.3, 2.4, and −5.1 V, respectively, to 2, 1, and −2.7 V. This led to an improvement in the endurance characteristics of the device, which thereby suggests that these improvements can be attributed to a reduction in the defects and trap density within the T-RRAM device caused by RTA.

Source: Inorganics

DOI: 10.3390/inorganics12120299

Authors: Yuseong Jang, Chanmin Hwang, Sanggyu Bang, Hee-Dong Kim

Institution: Sejong University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $3,069

Funder: National Research Foundation of Korea