Work

Investigation of total ionizing dose effects on SOI FinFETs at elevated temperatures

Year: 2024

Type: article

Source: Physica Scripta

DOI: 10.1088/1402-4896/ad954b

Authors: Z J Zhang, Y C Wu, F Y Liu, S P Zhao, H Y Liu, H Z Luo, X Zhang, Y L Li

Institutions: Chinese Academy of Sciences, Institute of Microelectronics, University of Chinese Academy of Sciences

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Youth Innovation Promotion Association of the Chinese Academy of Sciences, National Key Research and Development Program of China

Awards: G1900651086, G2517262041, G3246390480, 堆叠纳米线围栅器件的辐射损伤机理及在线增强自修复机制研究

OpenAlex ID: W4404590677

FWCI: 0.103

Cites: 27

Cited by: 1

Related to: 10