Work

GaN planar SBD grown and fabricated on SiC substrate with a cutoff frequency of 2.17 THz

Year: 2024

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/ad956a

Authors: Guodong Gu, Xiaolin Hao, Yawei Wang, Xubo Song, Lisen Zhang, Shixiong Liang, Yuanjie Lv, Zhihong Feng

Institution: Hebei Semiconductor Research Institute

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: 基于二维电子调控的片上高速太赫兹直接调制技术研究, G8547586347

OpenAlex ID: W4404591391

FWCI: 1.155

Cites: 18

Cited by: 8

Related to: 10