Mitigating self-turn-on failures in scaled carrier stored trench IGBT: a focus on poly-Si resistivity
Year: 2024
Type: article
Abstract: Scaled insulated gate bipolar transistors (IGBTs) show improvement in electrical performance, but their lower gate threshold voltage (V ge(th)) causes self-turn-on issues during high dV ce/dt or di c/dt switching conditions. In this study, we examine a carrier stored trench bipolar transistor (CSTBT) with a split-gate design to address the self-turn-on issue in scaled IGBTs. The split-gate configuration, which reduces Miller capacitance, helps to overcome self-turn-on failures of scaled split-gate CSTBT; however, the issue remains when considering the resistivity of poly-Si in the split-gates into account. To address this, we propose a selective-split-gate CSTBT design that resolves self-turn-on problems, even when poly-Si resistivity is considered. TCAD (Technology Computer Aided Design) simulations show that the proposed design is very effective in preventing self-turn-on and improves V ce(sat) by 24% compared to the scaled split-gate CSTBT.
Authors: Srikanth Gollapudi, Ichiro Omura
Institution: Kyushu Institute of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4404591806