Work

Demonstration and thermal reliability of an e-mode p-type hexagonal boron nitride gate AlGaN/GaN HEMT

Year: 2024

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.35848/1347-4065/ad94c1

Authors: Mei Ge, Yi Li, Youhua Zhu, Kexiu Dong, Shuxin Tan, Chenhui Yu, Dunjun Chen

Institutions: Nantong University, Chuzhou University, National Laboratory of Solid State Microstructures, Nanjing University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Research of Jiangsu Higher Education Institutions of China

Awards: G5694943389, G6214596592, G7555168090

OpenAlex ID: W4404592030

FWCI: 0.289

Cites: 35

Cited by: 2

Related to: 10