Development of hybrid bonding using area-selective passivation layer deposition technology on various substrates for heterogeneous integrated structure
Year: 2024
Type: article
Abstract: An advanced area-selective deposition approach for passivation layers in Cu/SiO2 and Cu/PI hybrid bonding structures is introduced in this study to reduce costs and process complexity compared to traditional PVD passivation. This method includes ultra-thin film via plasma pretreatment, successfully depositing passivation layers with precise thickness control which the Cu atoms could successfully diffuse through. The excellent hybrid bonding quality is achieved in the deposition of passivation layers, with successful bonding observed at temperatures ranging from 250 °C to 180 °C. Area-selective deposition on copper pads as small as 3 μm achieves complete area-selectivity, highlighting its significant potential for fine-pitch hybrid bonding applications. The outstanding electrical characteristics of Cu/SiO2 and Cu/PI hybrid bonding structures confirm excellent bonding quality in this study.
Authors: Wen-Tzu Tsai, Mu-Ping Hsu, Yi-Hsuan Chen, Yu-Lun Liu, Yuan-Chiu Huang, Kuan-Neng Chen
Institution: National Yang Ming Chiao Tung University
Language: English
Topic: 3D IC and TSV technologies
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,210
OpenAlex ID: W4404592102