Work

Green Chemical Shear-Thickening Polishing of Monocrystalline Silicon

Year: 2024

Type: article

Abstract: A green chemical shear-thickening polishing (GC-STP) method was studied to improve the surface precision and processing efficiency of monocrystalline silicon. A novel green shear-thickening polishing slurry composed of silica nanoparticles, alumina abrasive, sorbitol, plant ash, polyethylene glycol, and deionized water was formulated. The monocrystalline silicon was roughly ground using a diamond polishing slurry and then the GC-STP process. The material removal rate (MRR) during GC-STP was 4.568 μmh−1. The material removal mechanism during the processing of monocrystalline silicon via GC-STP was studied using elemental energy spectroscopy and FTIR spectroscopy. After 4 h of the GC-STP process, the surface roughness (Ra) of the monocrystalline silicon wafer was reduced to 0.278 nm, and an excellent monocrystalline silicon surface quality was obtained. This study shows that GC-STP is a green, efficient, and low-damage polishing method for monocrystalline silicon.

Source: Nanomaterials

DOI: 10.3390/nano14231866

Authors: Jiancheng Xie, Feng Shi, Shanshan Wang, Xing Peng, Qun Hao

Institutions: Beijing Institute of Technology, National University of Defense Technology, Changchun University of Science and Technology

Language: English

Topic: Advanced Surface Polishing Techniques

Subfield: Biomedical Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Responsible consumption and production

Open Access status: gold

Estimated APC paid: $3,296