Work

Analysis of trapping effects on DC and RF performance in double Π-gate Al0.3Ga0.7N/GaN MOSHEMTs

Year: 2024

Type: article

Source: Physica Scripta

DOI: 10.1088/1402-4896/ad9640

Authors: Rayabarapu Venkateswarlu, Bibhudendra Acharya, Guru Prasad Mishra

Institution: National Institute of Technology Raipur

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4404623341

FWCI: 1.04

Cites: 36

Cited by: 7

Related to: 10