Work

Low dIC/dt noise and on-state voltage 4H-SiC IGBT with N-barrier layer

Year: 2024

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.35848/1347-4065/ad967a

Authors: Kunhui Xu, Xiaoli Tian, Wei Wei, Yuhao Guo, Yun Bai, Chengyue Yang, Yidan Tang, Xinhua Wang, Xinyu Liu, Hong Chen

Institutions: Chinese Academy of Sciences, Institute of Microelectronics, University of Chinese Academy of Sciences

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4404623361

FWCI: 0.205

Cites: 28

Cited by: 2

Related to: 10