Evaluation of Fin Geometry and Threshold Voltage Variants on Single-Event Effects in 7-, 5-, and 3-nm Bulk FinFET Technologies
Year: 2024
Type: article
Abstract: Technology computer-aided design (TCAD) simulations are used to clarify the underlying mechanisms affecting single-event upset (SEU) results at 7-, 5-, and 3-nm bulk FinFET technologies using hard-biased, inverter, and latch configurations. The parameters varied for irradiation tests and simulations are threshold voltage ($V_{\text {T}}$) and fin geometry. Results show that estimated changes in geometry and process parameters across these technology generations have minimal effects on the collected charge, whereas circuit-level parameters strongly influence the collected charge, single-event transient (SET) pulse widths, and, subsequently, SEU cross sections.
Authors: Cassandra N. Nuñez Sanchez, Nicholas J. Pieper, Yoni Xiong, Jenna B. Kronenberg, Dennis R. Ball, Bharat L. Bhuva
Institution: Vanderbilt University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,495
OpenAlex ID: W4404628203